LOW-TEMPERATURE IRRADIATION OF n-TYPE GERMANIUM

Journal Article · Sat Feb 01 04:00:00 EST 1958 · Journal of Applied Physics (U.S.)

DOI:https://doi.org/10.1063/1.1723056· OSTI ID:4307453

Cleland, J W; Crawford, Jr, J H

The rate of change of conductivity of n-type single crystal plates of germanium at a temperature of ~ 16 deg K during fast neutron irradiation is enhanced over that previously observed at higher temperatures. Annealing studies subsequent to irradiation reveal no evidence of thermally unstable defect states between ~ 10 and ~ 95 deg K. Annealing ahove ~ 95 deg K indicates the presence of thermally unstable minority carrier traps of the type previously observed following irradiation at 120 deg K. The enhanced decrease in conductivity at 16 deg K compared to that observed at higher temperatures is believed to reflect a greater rate of introduction of defects, many of which anneal at temperatures above ~ 95 deg K. (auth)

• Research Organization: Oak Ridge National Lab., Tenn.
• Sponsoring Organization: USDOE
• NSA Number: NSA-12-006277
• OSTI ID: 4307453
• Journal Information: Journal of Applied Physics (U.S.), Journal Name: Journal of Applied Physics (U.S.) Vol. Vol: 29; ISSN JAPIA
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

ANNEALING
CRYSTALS
DEFECTS
ELECTRIC CONDUCTIVITY
ENERGY LEVELS
FAST NEUTRONS
GERMANIUM
IRRADIATION
LOW TEMPERATURE
PHYSICS
TRAPS