ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS
Radiation-induced defects studied through changes in conductivity and Hall coefficient have been observed to anneal in a number of different temperature ranges. Only those processes occurring above 80 deg K and involving defects created by electron irradiation have been considered in this paper. It has been found that the ftrst annealing process in n-type germanium occurs at about 50 deg C and is structure sensitive, apparently to the original chemical donor impurity. Higher temperature annealing processes, observed at about 200 deg C and previously interpreted as due to direct annihilation of vacancies and interstitials must also be sensitive to other crystal defects. In p-type germanium there is a process of rearrangement of a defect center at about 200 deg K, exhibiting first order kinetics, but with a time constant which is strongly dependent upon the charge state of the defect. At about 120 deg C the defects in p type apparently anneal out completely, in striking contrast to the n-type ease. Less extensive silicon measurements, showing lifetime recovery between 200 and 400 deg C again indicate through their kinetics the importance of other impurities or defects in the annealing process. (auth)
- Research Organization:
- Bell Telephone Labs., Inc., Murray Hill, N.J.
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-13-020609
- OSTI ID:
- 4203312
- Journal Information:
- Journal of Applied Physics (U.S.), Vol. Vol: 30; Other Information: Orig. Receipt Date: 31-DEC-59
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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SOLID STATE DIVISION ANNUAL PROGRESS REPORT FOR PERIOD ENDING AUGUST 31, 1959