SEMICONDUCTING PROPERTIES OF Mg$sub 2$Ge SINGLE CRYSTALS

Journal Article · Sat Mar 15 04:00:00 EST 1958 · Physical Review (U.S.) Superseded in part by Phys. Rev. A, Phys. Rev. B: Solid State, Phys. Rev. C, and Phys. Rev. D

DOI:https://doi.org/10.1103/PhysRev.109.1916· OSTI ID:4349700

Redin, R D; Morris, R G; Danielson, G C

Single crystals of Mg/sub 2/Ge have been obtained from melts of the constituents, and Hall effect and electrical resistivity measurements have been made from 77 to 1000 deg K. Undoped crystals were n-type and had saturated impurity carrier concentration as low as 3 x 10/sup 15/ cm/sup -3/; silver-doped crystals were p-type and had saturated impurity carrier concentrations roughly proportional to the amount of added silver. The room-temperature Hall mobilities were observed to be 280 cm/sup 2/volt-sec for electrons and 110 cm/sup 2/ volt- sec for holes. The hole mobility observed in the extrinsic region (120 to 350 deg K) of the highest purity p-type sample and the mobility difference observed in the intrinsic region (350 to 700 deg K) of the n-type samples varied with temperature as T/sup -2.0/. The mobility difference was found to decrease faster than T/sup -2.0/ above 700 deg K. The width of the energy gap at absolute zero, as determined from the temperature dependence of both the resistivity and the Hall effect in the intrinsic region, was 0.69 plus or minus 0.01 ev. (auth)

• Research Organization: Iowa State Coll., Ames
• NSA Number: NSA-12-008533
• OSTI ID: 4349700
• Journal Information: Physical Review (U.S.) Superseded in part by Phys. Rev. A, Phys. Rev. B: Solid State, Phys. Rev. C, and Phys. Rev. D, Journal Name: Physical Review (U.S.) Superseded in part by Phys. Rev. A, Phys. Rev. B: Solid State, Phys. Rev. C, and Phys. Rev. D Vol. Vol: 109; ISSN PHRVA
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

ELECTRIC CONDUCTIVITY
ELECTRONS
ENERGY
GERMANIUM ALLOYS
HALL EFFECT
IMPURITIES
MAGNESIUM ALLOYS
MELTING
MONOCRYSTALS
MOTION
PHYSICS
PREPARATION
SEMICONDUCTORS
SILVER
TEMPERATURE