SOLID STATE NEUTRON DETECTOR. Quarterly Report No. 5, October 1-December 31, 1961
Technical Report
·
OSTI ID:4830400
Studies were continued on radiation damage to SiC and diodes. Measurements of Hall effect and resistivity were performed on a number of p-type crystals of SiC in a temperature range between 300 and 1300 deg K. An activation energy of 0.31 ev for the acceptor impurities was deduced from the temperature dependence of free hole concentration. The Hall mobility decreased from about 40 cm/sup 2/ v/sup -1/ sec/sup -1/ at 300 deg K to 2.7 cm/sup 2/ v/sup -1/sec/-1/ at 1000 deg K. The scattering mechanism for holes in SiC was studied. The Hall mobility cure was explained by three scattering mechanisms: scattering by optical phonons, acoustical phonons, and charged impurity centers. (auth)
- Research Organization:
- Brussels. Centre d'Etude de l'Energie Nucleaire
- NSA Number:
- NSA-16-019072
- OSTI ID:
- 4830400
- Report Number(s):
- EURAEC-246
- Country of Publication:
- United States
- Language:
- English
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