Hall effect in reactively sputtered Cu/sub 2/S
Journal Article
·
· Appl. Phys. Lett.; (United States)
The Hall effect in thin films of reactively sputtered Cu/sub 2/S was measured at temperatures from 90 to 300 /sup 0/K. The hole concentration ranged from 10/sup 18/ to 2 x 10/sup 19/ cm/sup -3/. The hole mobility ranged from 5.5 to 9 cm/sup 2//V s. The predominant scattering mechanisms are ionized impurity scattering at T<100 /sup 0/K and optical phonon scattering at T>100 /sup 0/K.
- Research Organization:
- Lawrence Livermore Laboratory, University of California, Livermore, California 94550
- OSTI ID:
- 5948925
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 35:8; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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