THE ELECTRICAL CONDUCTIVITY AND HALL EFFECT OF SILICON
The electrical conductivity and Hall effect were measured over the temperature range 20 to 500 deg K on single crystals of silicon with extrinsic carrier concentrations between 2 and 5 x 10/sup 12/ cm/sup -3/. The Hall mobility for electrons and holes can be represented between 100 and 300 deg K by the expression 1.2 x 10/sup 8/T/sup -2/ and 2.9 x 10/sup 9/T/sup -2.7/, respectively. Both these results indicate a higher Hall mobility than has been previously reported, and the result for holes is greater than values reported for the drift mobility. From the results between 350 and 500 deg K the expression n/ sub i/ = 3.10 x 10/sup 16/T/sup 3/2 exp --0.603/kT was obtained for the intrinsic concentration. Attempts were made to estimate the total impurity concentration in these specimens. The variation of extrinsic carrier concentration with temperature and the effect of impurity scattering at 20 deg K both indicate that the total concentration of impurities is less than 10/sup 14/ cm/sup -3/. (auth)
- Research Organization:
- Royal Radar Establishment, Malvern, Worcs., Eng.
- NSA Number:
- NSA-12-016447
- OSTI ID:
- 4309870
- Journal Information:
- Proc. Phys. Soc. (London), Journal Name: Proc. Phys. Soc. (London) Vol. Vol: 72
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Similar Records
SOLID STATE NEUTRON DETECTOR. Quarterly Progress Report No. 3, April-June 1961
Hall effect in reactively sputtered Cu/sub 2/S