SOLID STATE NEUTRON DETECTOR. Quarterly Progress Report No. 3, April-June 1961

Technical Report · Tue Aug 01 04:00:00 EDT 1961

OSTI ID:4805333

The effect of reactor irradiation on the behavior of diodes is discussed. It was assumed that some of the diodes have a p-i-n structure, which changes into a p-s-n structure by the introduction of donor impuritles upon reactor irradiation. As a consequence of this change the slope of the semilogarithmically plotted forward characteristics increases from q/2 kT to q/ kT, as was observed at a neutron dose of 10/sup 15/ neutrons/cm/sup 2/. It was observed that the saturation current decreases at the same dose and this was in agreement with the fact that the saturation current of a p-s-n structure is less than that of a p-i-n structure. The increase of the photo-current upon irradiation with U.V. light, at this neutron dose meant that the photosensitivity or the photosensitive volume increased in the intrinsic region which might happen as a result of a shift of the Fermi level. Hall and resistivity measurements were started with n-type silicon carbide in a temperature range between 300 and l000 deg K. With rising temperature the conductivity first showed the typical temperature dependence sigma = sigma /sub O/e /sup -(e/kT) but went through a maximum at about 600 deg K. The Hall coefficient decreased with increasing temperature. The charge carrier concentration, calculated from the Hall coefficient, varied between 10/sup 17/(300 deg K) and l0/sup 18/ (l000 deg K) electrons/cm/sup 3/ The ionization energy of the donor impurities, calculated from the change in charge carrier concentration with temperature was found to be 0.092 ev. The mobility R mu varied between 10 and 20 cm/sup 2/ V/sup -1/sec/sup -1/, with a maximum at about 375 deg K. (auth)

• Research Organization: Brussels. Centre d'Etude de L'Energie Nucleaire
• NSA Number: NSA-16-005489
• OSTI ID: 4805333
• Report Number(s): EURAEC-161
• Country of Publication: United States
• Language: English

Related Subjects

ELECTRIC CONDUCTIVITY
ENGINEERING AND EQUIPMENT
IRRADIATION
NEUTRON DETECTION
NEUTRON FLUX
PHOTOELECTRIC EFFECT
RADIATION DOSES
REACTORS
SEMICONDUCTORS
SENSITIVITY
TEMPERATURE
TRANSISTORS