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Optical and electron transport properties of reactively sputtered Cu/sub x/S

Technical Report ·
DOI:https://doi.org/10.2172/6697578· OSTI ID:6697578

Thin films of Cu/sub x/S were deposited on glass slides by sputtering Cu in a reactive H/sub 2/S/Ar environment. Optical transmittance and reflectance measurements were used to explore the infrared absorption spectra of the material. Analysis of the absorption edge characteristics resulted in the identification of an indirect bandgap at 1.15 (+-.05) eV, a direct bandgap at 1.30 (+-.05) eV, and an electron effective mass of 1.0 (+-0.2) m/sub 0/. Electrical data consisting of resistivity and Hall effect measurements from liquid nitrogen to room temperature were analyzed to determine the dominant scattering mechanisms limiting the hole mobility in the material. Ionized impurity scattering was the dominant mechanism at low temperatures (T < 100/sup 0/K) and polar optical phonon scattering was most effective at high temperatures (T > 150/sup 0/K). All films were p-type. Effects of sputtering gas pressure, heat treatments, and temperature on the properties were studied.

Research Organization:
California Univ., Livermore (USA). Lawrence Livermore National Lab.
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
6697578
Report Number(s):
UCRL-52963
Country of Publication:
United States
Language:
English