Optical and electron transport properties of reactively sputtered Cu/sub x/S
Thin films of Cu/sub x/S were deposited on glass slides by sputtering Cu in a reactive H/sub 2/S/Ar environment. Optical transmittance and reflectance measurements were used to explore the infrared absorption spectra of the material. Analysis of the absorption edge characteristics resulted in the identification of an indirect bandgap at 1.15 (+-.05) eV, a direct bandgap at 1.30 (+-.05) eV, and an electron effective mass of 1.0 (+-0.2) m/sub 0/. Electrical data consisting of resistivity and Hall effect measurements from liquid nitrogen to room temperature were analyzed to determine the dominant scattering mechanisms limiting the hole mobility in the material. Ionized impurity scattering was the dominant mechanism at low temperatures (T < 100/sup 0/K) and polar optical phonon scattering was most effective at high temperatures (T > 150/sup 0/K). All films were p-type. Effects of sputtering gas pressure, heat treatments, and temperature on the properties were studied.
- Research Organization:
- California Univ., Livermore (USA). Lawrence Livermore National Lab.
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 6697578
- Report Number(s):
- UCRL-52963
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ABSORPTION SPECTRA
CHALCOGENIDES
COPPER COMPOUNDS
COPPER SULFIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FILMS
HALL EFFECT
HEAT TREATMENTS
HOLES
INFRARED SPECTRA
LOW TEMPERATURE
MATERIALS
MEDIUM TEMPERATURE
OPTICAL PROPERTIES
P-TYPE CONDUCTORS
PHONONS
PHYSICAL PROPERTIES
QUASI PARTICLES
SCATTERING
SEMICONDUCTOR MATERIALS
SPECTRA
SPUTTERING
SULFIDES
SULFUR COMPOUNDS
TEMPERATURE DEPENDENCE
TRANSITION ELEMENT COMPOUNDS