PHOTOELECTRIC DEVICE
Patent
·
OSTI ID:4211637
A radiation detector made up of a p-type semiconductor layer and a phosphorescent n-type layer is described. The p-type material may be Se with Al electrode bonded to it by a Bi layer. The n-type material is Ag-activated CdSe or CdS. One cell exposed to 50,000 r of 140-kv x radiation produced 0.2 mu amp photovoltaically and 5.3 mu amp photoconductively. Photovoltaic operation of the device may be applied to monitoring or safety applications. The photoconductive character makes it useful where accessory equipment can be used. (T.R.H.)
- Research Organization:
- Originating Research Org. not identified
- NSA Number:
- NSA-13-021145
- Assignee:
- General Electric Co.
- Patent Number(s):
- US 2885562
- OSTI ID:
- 4211637
- Country of Publication:
- United States
- Language:
- English
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