Effective photoelectric converters of ultraviolet radiation with graded-gap ZnS-based layers

Journal Article · Mon Jun 15 04:00:00 EDT 2009 · Semiconductors

DOI:https://doi.org/10.1134/S1063782609060219· OSTI ID:21260341

Bobrenko, Yu N; Pavelets, A M ^[1]

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1. National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)

The use of ultrathin ({approx}10 nm) stable p-Cu{sub 1.8}S films as a transparent component of the p-Cu{sub 1.8}S-n-ZnS heterojunction as well as of the graded-gap layers made it possible to obtain effective photoconverters of ultraviolet radiation. The results of examination of the properties of photoactive Cu{sub 1.8}S-ZnS junctions grown on the CdS or CdSe substrates with intermediate graded-gap layers CdS-Zn{sub x}Cd{sub 1-x}S or CdSe-(ZnS){sub x}(CdSe){sub 1-} {sub x}, respectively, are presented. With the correct selection of parameters of the substrates, the graded-gap layers allows one to attain the optimal characteristics of the p-n junction, to realize high electric fields at the Cu{sub 1.8}S-ZnS contact, and to solve the problem of fabrication of the back ohmic contact to ZnS without additional doping of all components of the heterostructure with a foreign impurity. Varying the thickness of a thin ZnS layer, it is possible to control the extension of the space charge in the graded-gap layer and thereby to control the long-wavelength edge of photoconverter sensitivity.

• OSTI ID: 21260341
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 43; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM SELENIDES
CADMIUM SULFIDES
FABRICATION
FILMS
HETEROJUNCTIONS
IMPURITIES
LAYERS
P-N JUNCTIONS
SENSITIVITY
SPACE CHARGE
ULTRAVIOLET RADIATION
ZINC SULFIDES