Efficient photoelectric converters of ultraviolet radiation based on ZnS and CdS with low-resistivity surface layers

Journal Article · Sun Aug 15 04:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610080221· OSTI ID:21562234

Bobrenko, Yu N; Pavelets, A M; Kiselyuk, M P; Yaroshenko, N V ^[1]

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1. National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

The formation of thin high- and low-resistivity layers in the space-charge region of Cu{sub 1.8}S-CdS and Cu{sub 1.8}S-ZnS surface-barrier photoconverter structures leads to a considerable increase in photosensitivity and a reduction in the dark tunneling-recombination currents. Highly efficient and stable ultraviolet photoconverters based on CdS and ZnS were obtained, and their electrical and photoelectrical properties were studied. The main operational parameters of the photoconverters are reported.

• OSTI ID: 21562234
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 44; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM COMPOUNDS
CADMIUM SULFIDES
CHALCOGENIDES
CHEMICAL REACTIONS
CURRENTS
ELECTROMAGNETIC RADIATION
INORGANIC PHOSPHORS
LAYERS
PHOSPHORS
PHOTOSENSITIVITY
RADIATIONS
RECOMBINATION
REDUCTION
SENSITIVITY
SPACE CHARGE
SULFIDES
SULFUR COMPOUNDS
SURFACES
TUNNEL EFFECT
ULTRAVIOLET RADIATION
ZINC COMPOUNDS
ZINC SULFIDES