Surface-barrier photoconverters with graded-gap layers in the space-charge region
- National Academy of Sciences, Lashkaryov Institute of Semiconductor Physics (Ukraine)
A novel possibility of controlling the parameters of p-Cu{sub 1.8}S-n-II-VI surface-barrier structures by embedding a thin graded-gap layer into a photoconverter space-charge region (SCR) is implemented. The feature of quasi-electric fields built in the SCR, i.e., the fact that an increase in the drift field for minority carriers can be accompanied by a decrease in the potential barrier for majority carriers, is considered. The proper choice of the parameters of the Cd{sub x}Zn{sub 1−x}S graded-gap layer embedded in the Cu{sub 1.8}S-ZnS structure SCR made it possible to double the quantum efficiency in the ultraviolet spectral region. For Cu{sub 1.8}S-CdS photoconverters with a (CdS){sub x}(ZnSe){sub 1−x} intermediate layer, dark diode currents are decreased by three orders of magnitude while retaining a high quantum efficiency.
- OSTI ID:
- 22469980
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 49; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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