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U.S. Department of Energy
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HIGH ENERGY RADIATION DETECTOR

Patent ·
OSTI ID:4168401
A transistor radiation detector is described. On an Al base a flash coating of Bi is applied to bond well with the p-type Se layer. The next layer is an n-type material such as CdSe(Ag) or CdS(Ag). Finally, a counter electrode layer of Cd or Zn is applied. Such a device is useful in the detection and measurement of x and gamma rays. (T.R.H.)
Research Organization:
Originating Research Org. not identified
NSA Number:
NSA-14-008598
OSTI ID:
4168401
Report Number(s):
GB 827977
Country of Publication:
United Kingdom
Language:
English

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