Silicon nitride oxidation based on oxynitride interlayers with graded stoichiometry

Journal Article · Fri Nov 01 04:00:00 EST 1996 · Journal of the American Ceramic Society

DOI:https://doi.org/10.1111/j.1151-2916.1996.tb08742.x· OSTI ID:417792

Sheldon, B W ^[1]

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1. Brown Univ., Providence, RI (United States). Div. of Engineering

The oxidation kinetics of Si{sub 3}N{sub 4} were modeled by describing the simultaneous diffusion and reaction of interstitial oxygen that is believed to occur inside of the silicon oxynitride interlayer. The oxynitride was assumed to have a variable composition, and oxidation was described as a reaction where interstitial oxygen is incorporated into the network structure of the oxynitride and nitrogen is removed. It was assumed that both the diffusion coefficient and the solubility of interstitial oxygen decrease as the nitrogen content of the network structure increases. The results accurately describe both the formation of an oxynitride layer during oxidation, and the relatively slow oxidation kinetics of Si{sub 3}N{sub 4} (compared to Si and SiC).

• Sponsoring Organization: USDOE
• OSTI ID: 417792
• Journal Information: Journal of the American Ceramic Society, Journal Name: Journal of the American Ceramic Society Journal Issue: 11 Vol. 79; ISSN 0002-7820; ISSN JACTAW
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL COMPOSITION
DIFFUSION
KINETICS
MATHEMATICAL MODELS
OXIDATION
SILICON NITRIDES
SOLUBILITY