Silicon nitride oxidation based on oxynitride interlayers with graded stoichiometry
- Brown Univ., Providence, RI (United States). Div. of Engineering
The oxidation kinetics of Si{sub 3}N{sub 4} were modeled by describing the simultaneous diffusion and reaction of interstitial oxygen that is believed to occur inside of the silicon oxynitride interlayer. The oxynitride was assumed to have a variable composition, and oxidation was described as a reaction where interstitial oxygen is incorporated into the network structure of the oxynitride and nitrogen is removed. It was assumed that both the diffusion coefficient and the solubility of interstitial oxygen decrease as the nitrogen content of the network structure increases. The results accurately describe both the formation of an oxynitride layer during oxidation, and the relatively slow oxidation kinetics of Si{sub 3}N{sub 4} (compared to Si and SiC).
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 417792
- Journal Information:
- Journal of the American Ceramic Society, Vol. 79, Issue 11; Other Information: DN: Presented at the 18. annual conference on composites and advanced ceramics, January 9--14, 1994, Cocoa Beach, FL (US); PBD: Nov 1996
- Country of Publication:
- United States
- Language:
- English
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