Chemical interaction between silicon nitride and titanium carbide powder

Journal Article · Fri Sep 01 04:00:00 EDT 1995 · Journal of the American Ceramic Society

DOI:https://doi.org/10.1111/j.1151-2916.1995.tb08675.x· OSTI ID:116094

Yeh, C H; Hon, M H ^[1]

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1. National Cheng Kung Univ., Tainan (Taiwan, Province of China). Dept. of Materials Science and Engineering

Chemical interaction within the system Si{sub 3}N{sub 4}-TiC was investigated in the present study by using thermodynamic calculations and kinetic analyses. The thermodynamic stabilities of such Si{sub 3}N{sub 4}-TiC composites as Si{sub 3}N{sub 4}-TiN-C and Si{sub 3}N{sub 4}-Ti(C,N)-C, and SiC-Ti(C,N) stability regions were defined and related to temperature and nitrogen partial pressures. Kinetic analyses were performed by constructing a relative weight-loss analysis of various Si{sub 3}N{sub 4}:TiC molar ratios reacted at temperatures from 1,300 to 1,750 C in an argon atmosphere. The reaction rates increased with the decreases in the Si{sub 3}N{sub 4}:TiC ratio and with increases in temperature. The reaction products consisted mainly of SiC and Ti(C,N) phases. The overall chemical interaction observed in the present study is attributable to chemical reactions between Si{sub 3}N{sub 4} and TiC and to the diffusion of carbon and nitrogen through the reaction layer after a dense reaction product layer had covered the titanium carbide.

• Sponsoring Organization: USDOE
• OSTI ID: 116094
• Journal Information: Journal of the American Ceramic Society, Journal Name: Journal of the American Ceramic Society Journal Issue: 9 Vol. 78; ISSN 0002-7820; ISSN JACTAW
• Country of Publication: United States
• Language: English

Related Subjects

40 CHEMISTRY
CARBON
CHEMICAL REACTIONS
DIFFUSION
NITROGEN
PARTIAL PRESSURE
POWDERS
REACTION KINETICS
SCANNING ELECTRON MICROSCOPY
SILICON CARBIDES
SILICON NITRIDES
TEMPERATURE DEPENDENCE
THERMODYNAMICS
TITANIUM CARBIDES
TITANIUM NITRIDES
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY