Oxidation studies of silicon oxynitride ceramics

Journal Article · Wed Apr 01 04:00:00 EST 1998 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1838465· OSTI ID:624307

Manessis, D; Du, H ^[1]; Larker, R ^[2]

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1. Stevens Inst. of Tech., Hoboken, NJ (United States). Dept. of Materials Science and Engineering
2. Lulea Univ. of Technology (Sweden)

Silicon oxynitride ceramics free from sintering aids were oxidized in oxygen-argon and oxygen-nitrogen gas mixtures with varying oxygen and nitrogen partial pressures in the range of 1,000 to 1,300 C. Oxidation kinetics of Si{sub 2}N{sub 2}O followed a parabolic rate law with activation energies ranging from 43 to 52 kcal/mol. The parabolic rate constants for Si{sub 2}N{sub 2}O exhibited a linear dependence on the oxygen partial pressure but no dependence on the nitrogen partial pressure. These findings, in conjunction with established knowledge of the oxide and interface characteristics of oxidized samples, suggested that molecular oxygen diffusion through SiO{sub 2} plays a predominant role in the rate-limiting process for the oxidation of Si{sub 2}N{sub 2}O.

• Sponsoring Organization: USDOE
• OSTI ID: 624307
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 4 Vol. 145; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
CHEMICAL REACTION KINETICS
HEAT RESISTANT MATERIALS
OXIDATION
SILICON NITRIDES
SILICON OXIDES