Oxidation studies of silicon oxynitride using X-ray photoelectron spectroscopy and transmission electron microscopy

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:470935

Manessis, D; Du, H ^[1]; Singer, I L ^[2]; Larker, R ^[3]

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1. Stevens Inst. of Tech., Hoboken, NJ (United States). Dept. of Materials Science and Engineering
2. Naval Research Lab., Washington, DC (United States). Chemistry Div.
3. Lulea Univ. of Technology (Sweden). Div. of Engineering Materials

Silicon oxynitride (Si{sub 2}N{sub 2}O) ceramics were oxidized in 1 atm dry oxygen at 1,100 C and 1,300 C. The oxidized samples were studied using x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy in conjunction with energy dispersive x-ray analysis. TEM characterization revealed the chemical abruptness of the SiO{sub 2} and Si{sub 2}N{sub 2}O interface. Further investigation indicated the inclusions of residual SiO{sub 2} in Si{sub 2}N{sub 2}O, which contributed to the broad XPS elemental distribution in the oxide-substrate interface region.

• Sponsoring Organization: National Science Foundation, Washington, DC (United States); Office of Naval Research, Washington, DC (United States)
• OSTI ID: 470935
• Report Number(s): CONF-951155--; ISBN 1-55899-313-4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CHEMICAL ANALYSIS
EXPERIMENTAL DATA
INCLUSIONS
INTERFACES
MORPHOLOGY
OXIDATION
OXYGEN
SILICON NITRIDES
SILICON OXIDES
TEMPERATURE RANGE 1000-4000 K