Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Room-temperature operation and threshold temperature dependence of LPE- grown In/sub x/Ga/sub 1-x/As homojunction lasers

Journal Article · · J. Appl. Phys., v. 46, no. 12, pp. 5280-5282
OSTI ID:4131155
InGa/sub 1-x//subx/As homojunction lasers prepared by liquid-phase epitaxy have been operated from below 77$sup 0$K to room temperature. Lowest thresholds were J)=2000 A/cm$sup 2$ at 77$sup 0$K and 290 000 A/cm$sup 2$ at room temperature. The variation of threshold with temperature can be fit by either Japprox.T$sup 3$ or Japprox.exp(T/67$sup 0$K) above approx.150$sup 0$K, and by Japprox.T$sup 2$$.$$sup 3$ at lower temperatures. (AIP)
Research Organization:
Bell Telephone Laboratories, Holmdel, New Jersey 07733
NSA Number:
NSA-33-009153
OSTI ID:
4131155
Journal Information:
J. Appl. Phys., v. 46, no. 12, pp. 5280-5282, Journal Name: J. Appl. Phys., v. 46, no. 12, pp. 5280-5282; ISSN JAPIA
Country of Publication:
United States
Language:
English

Similar Records

Low-threshold room-temperature double-heterostructure GaAs/sub 1-x/Sb/sub x/ Al/sub y/Ga/sub 1-y/As/sub 1-x/Sb/sub x/ injection lasers at 1-$mu$m wavelengths
Journal Article · Fri Nov 14 23:00:00 EST 1975 · Appl. Phys. Lett., v. 27, no. 10, pp. 562-564 · OSTI ID:4165416

Low-threshold room-temperature embedded heterostructure lasers
Journal Article · Wed Sep 15 00:00:00 EDT 1976 · Appl. Phys. Lett.; (United States) · OSTI ID:7268995

Double heterojunction PbS-PbS/sub 1//sub -//subx/Se/subx/-PbS laser diodes with cw operation up to 96 K
Journal Article · Tue Jun 01 00:00:00 EDT 1976 · Appl. Phys. Lett.; (United States) · OSTI ID:7282866