Double heterojunction PbS-PbS/sub 1//sub -//subx/Se/subx/-PbS laser diodes with cw operation up to 96 K

Journal Article · Tue Jun 01 00:00:00 EDT 1976 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.88616· OSTI ID:7282866

Preier, H; Bleicher, M; Riedel, W; Maier, H

Double heterojunction PbS-PbS/sub 1//sub -//subx/Se/subx/-PbS laser diodes have been fabricated by hot-wall molecular beam epitaxy. The lasers had stripe geometry of 100-..mu..m width formed by MgF/sub 2/ passivation. Structures for electron and hole injection, respectively, are compared. Devices with 1-..mu..m-thick active layers showed threshold current densities of about 400 A/cm/sup 2/ at 77 K and 1.4 x 10/sup 4/ A/cm/sup 2/ at 190 K. cw operation could be realized up to 96 K. (AIP)

• Research Organization: AEG-TELEFUNKEN Forschungsinstitut, Frankfurt, Germany
• OSTI ID: 7282866
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 28:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ENERGY
EPITAXY
FABRICATION
JUNCTIONS
LASERS
LAYERS
OPERATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD ENERGY