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Oscillation Observed in Silicon Surface-Barrier Diodes under Pulsive Electron Bombardment

Journal Article · · Japanese Journal of Applied Physics
DOI:https://doi.org/10.1143/JJAP.2.806· OSTI ID:4112984
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The observation of oscillations in silicon-gold photodiodes under pulsed electron bombardment, where the diameter of the spot of the electron beam was 1 mm and the accelerating voltage and bombarding current were 2 to 50 kv and 10-8 to 10-5 amp, respectively, is reported. (R.E.U.)
Research Organization:
Matsushita Research Inst. Tokyo, Inc.
Sponsoring Organization:
USDOE
NSA Number:
NSA-18-010399
OSTI ID:
4112984
Journal Information:
Japanese Journal of Applied Physics, Journal Name: Japanese Journal of Applied Physics Journal Issue: 12 Vol. 2; ISSN 0021-4922
Publisher:
Japan Society of Applied Physics
Country of Publication:
Country unknown/Code not available
Language:
English

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Related Subjects

CURRENTS
ELECTRIC POTENTIAL
ELECTRON BEAMS
GOLD
INSTRUMENTATION
OSCILLATIONS
PHOTOELECTRIC EFFECT
PULSES
SEMICONDUCTORS
SILICON