Photoeffects in Silicon Surface-Barrier Diodes

Journal Article · Mon Jan 01 04:00:00 EST 1962 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1728475· OSTI ID:4816548

Tuzzolino, A. J.; Hubbard, E. L.; Perkins, M. A.; Fan, C. Y.

33: l48-55(Jan. l962). Silicon surface-barrier photodiodes were fabricated and the steady-state and time-varying photoresponse were measured. The photodiodes are operated in the reverse-bias, or photoconductive mode at room temperature and do not require encapsulation. The average steadystate photosensitivity is 0.31 mu a/ mu w,( lambda = 5461 A) and 0.065 mu a/ mu w ( lambda = 2537 A) with approximately 50 A of gold on the sensitive area. With no gold on the sensitive area, the photosensitivity is 0.37 mu a/ mu w and 0.13 mu a/ mu w, respectively. The photoresponse is uniform over the sensitive area (0.1 to 2.5 cm/sup 2/) to within a few percents depending on the wavelength. The high- frequency cutoff is limited by the photodiode capacitance and load resistance. Cutoff frequencies greater than 100 kc have been obtained. The operating characteristics of these devices are reported for six wavelengths lying in the range of approximately 0.2 to 0.6 mu . The possibility of using photodiodes of this type in combination with a scintillator crystal for detecting charged particles is discussed. (auth)

• Research Organization: Univ. of Chicago
• Sponsoring Organization: USDOE
• NSA Number: NSA-16-008924
• OSTI ID: 4816548
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 33; ISSN JAPIAU; ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

CAPACITORS
CHARGED PARTICLES
ELECTRIC CONDUCTIVITY
ENGINEERING AND EQUIPMENT
FREQUENCY
GOLD
PHOTOELECTRIC EFFECT
SCINTILLATION COUNTERS
SEMICONDUCTORS
SENSITIVITY
SILICON
SURFACES
TEMPERATURE