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Monte Carlo simulation of spatially distributed beams in electron-beam lithography

Journal Article · · J. Vac. Sci. Technol., v. 12, no. 6, pp. 1305-1308
DOI:https://doi.org/10.1116/1.568524· OSTI ID:4080020
The spatial distribution of energy deposited in a thin polymer film of polymethyl methacrylate (PMMA) by a laterally distributed electron beam is simulated with Monte Carlo calculations. The Monte Carlo simulation includes the significant contribution from electrons that are backscattered from the substrate (Si) into the film. Equienergy density contours (eV/cm$sup 3$) are calculated for specific cases of beam voltage, film thickness, beam width, and beam-edge slope. A time-dependent solubility model is also incorporated to simulate the time evolution of the developed contours. A size effect is observed; i.e., the development time for a line depends on the line width. This intraproximity effect is ascribed to electrons backscattered from the substrate. (AIP)
Research Organization:
IBM Research Division, San Jose, California 95193
Sponsoring Organization:
USDOE
NSA Number:
NSA-33-016118
OSTI ID:
4080020
Journal Information:
J. Vac. Sci. Technol., v. 12, no. 6, pp. 1305-1308, Journal Name: J. Vac. Sci. Technol., v. 12, no. 6, pp. 1305-1308; ISSN JVSTA
Country of Publication:
United States
Language:
English