Temperature dependence of surface roughening during homoepitaxial growth on Cu(001)
Journal Article
·
· Physical Review B
X-ray scattering has been used to study the roughening of the Cu(001) surface during homoepitaxial growth, as a function of temperature. Between 370 and 160 K, the mean-square roughness {sigma}{sup 2}, obtained from specular reflectivity data, was found to increase as a power law {sigma}{sup 2}={Theta}{sup 2{beta}} for coverages {Theta}, ranging from 3 to 96 ML. The roughening exponent {beta} was observed to depend on the temperature of the substrate: it monotonically increases with decreasing temperature from {beta}{approx}1/3 at T=370 K to {beta}{approx}1/2, at T=200 K. At 110 K a smoother growth re-enters in the presence of a large vacancy concentration in the deposited film.
- Sponsoring Organization:
- (US)
- DOE Contract Number:
- FG02-86ER45231
- OSTI ID:
- 40277630
- Journal Information:
- Physical Review B, Journal Name: Physical Review B Journal Issue: 12 Vol. 64; ISSN 0163-1829
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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