Molecular Beam Homoepitaxial Growth of MgO(001)

Chambers, Scott A.; Tran, Thuy T.; Hileman, Thomas A.

doi:10.1557/JMR.1994.2944

Molecular Beam Homoepitaxial Growth of MgO(001)

Journal Article · Mon Oct 31 23:00:00 EST 1994 · Journal of Materials Research

DOI:https://doi.org/10.1557/JMR.1994.2944· OSTI ID:1582553

^[1]; Tran, Thuy T. ^[2]; Hileman, Thomas A. ^[1]

BATTELLE (PACIFIC NW LAB)
CH2M HILL HANF GROUP INC

We describe homoepitaxial growth and detailed in situ characterization of MgO(001). We have used, for the first time, high-speed Auger electron spectroscopy as a real-time probe of film composition during growth. Excellent short-range and long-range crystallographic order are achieved in films grown to a thickness of several hundred angstroms in the substrate temperature range of 450 degrees C to 750 degrees C. Moreover, the films become more laminar as the growth temperature increases, suggesting that MgO grows homoepitaxially by the step-flow growth mechanism at elevated temperature. The surface of films grown at 650 degrees and 750 degrees C are smoother than those obtained by cleaving MgO(001).

Research Organization:: Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC05-76RL01830

OSTI ID:: 1582553

Report Number(s):: PNNL-SA-24353

Journal Information:: Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 11 Vol. 9

Country of Publication:: United States

Language:: English

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