Molecular beam homoepitaxial growth of MgO(001)

Journal Article · Mon Oct 31 23:00:00 EST 1994 · Journal of Materials Research; (United States)

DOI:https://doi.org/10.1557/JMR.1994.2944· OSTI ID:7183074

Chambers, S A; Tran, T T; Hileman, T A ^[1]

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1. Molecular Science Research Center, Pacific Northwest Laboratory, Richland, Washington 99352 (United States)

We describe homoepitaxial growth and detailed [ital in] [ital situ] characterization of MgO(001). We have used, for the first time, high-speed Auger electron spectroscopy as a real-time probe of film composition during growth. Excellent short-range and long-range crystallographic order are achieved in films grown to a thickness of several hundred Angstroms in the substrate temperature range of 450 [degree]C to 750 [degree]C. Moreover, the films become more laminar as the growth temperature increases, suggesting that MgO grows homoepitaxially by the step-flow growth mechanism at elevated temperature. The surfaces of films grown at 650[degree] and 750 [degree]C are smoother than those obtained by cleaving MgO(001).

• DOE Contract Number: AC06-76RL01830
• OSTI ID: 7183074
• Journal Information: Journal of Materials Research; (United States), Journal Name: Journal of Materials Research; (United States) Vol. 9:11; ISSN JMREEE; ISSN 0884-2914
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ALKALINE EARTH METAL COMPOUNDS
AUGER ELECTRON SPECTROSCOPY
CHALCOGENIDES
ELECTRON SPECTROSCOPY
EPITAXY
MAGNESIUM COMPOUNDS
MAGNESIUM OXIDES
MOLECULAR BEAM EPITAXY
MORPHOLOGY
OXIDES
OXYGEN COMPOUNDS
SPECTROSCOPY
SUBSTRATES
SURFACE PROPERTIES
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K