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Title: Multiaxial channeling study of disorder accumulation and recovery in gold-irradiated 6H-SiC

Abstract

Single crystal 6H-SiC has been irradiated 60{sup o} off normal with 2 MeV Au{sup 2+} ions at 300 K to fluences of 0.029, 0.058, and 0.12 ions/nm2, which produced relatively low damage levels. The disorder profiles as a function of ion fluence on both the Si and C sublattices have been determined simultaneously in situ using Rutherford backscattering and nuclear reaction analysis with 0.94 MeV D{sup +} ions in channeling geometry along the <0001>, <1{bar 1}02>, and <10{bar 1}1> axes. Along the <0001> axis at these low doses, similar levels of Si and C disorder are observed, and the damage accumulation is linear with dose. However, along <1{bar 1}02> and <10{bar 1}1>, the disorder accumulation is larger and increases sublinearly with dose. Furthermore, a higher level of C disorder than Si disorder is observed along the <1{bar 1}02> and <10{bar 1}1> axes, which is consistent with a smaller threshold displacement energy on the C sublattice in SiC. The mean lattice displacement, perpendicular to each corresponding axis, ranges from 0.014 to 0.037 nm for this range of ion fluences. A steady accumulation of small displacements due to lattice stress is observed along the <10{bar 1}1> axis, and a detectable reduction ofmore » the lattice stress perpendicular to the <0001> axis occurs at 0.12 Au{sup 2+}/nm{sup 2}. There is only a moderate recovery of disorder, produced at and below 0.058 Au{sup 2+}/nm{sup 2}, during thermal annealing at 570 K; more significant recovery is observed for 0.12 Au{sup 2+}/nm{sup 2} along both the <0001> and <1{bar 1}02> axes.« less

Authors:
;
Publication Date:
Sponsoring Org.:
(US)
OSTI Identifier:
40277621
DOE Contract Number:  
AC 06-76RLO 1830
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 64; Journal Issue: 12; Other Information: DOI: 10.1103/PhysRevB.64.125206; Othernumber: PRBMDO000064000012125206000001; 032136PRB; PBD: 15 Sep 2001; Journal ID: ISSN 0163-1829
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; BACKSCATTERING; CHANNELING; GEOMETRY; MONOCRYSTALS; NUCLEAR REACTION ANALYSIS

Citation Formats

Jiang, W, and Weber, W J. Multiaxial channeling study of disorder accumulation and recovery in gold-irradiated 6H-SiC. United States: N. p., 2001. Web. doi:10.1103/PhysRevB.64.125206.
Jiang, W, & Weber, W J. Multiaxial channeling study of disorder accumulation and recovery in gold-irradiated 6H-SiC. United States. doi:10.1103/PhysRevB.64.125206.
Jiang, W, and Weber, W J. Sat . "Multiaxial channeling study of disorder accumulation and recovery in gold-irradiated 6H-SiC". United States. doi:10.1103/PhysRevB.64.125206.
@article{osti_40277621,
title = {Multiaxial channeling study of disorder accumulation and recovery in gold-irradiated 6H-SiC},
author = {Jiang, W and Weber, W J},
abstractNote = {Single crystal 6H-SiC has been irradiated 60{sup o} off normal with 2 MeV Au{sup 2+} ions at 300 K to fluences of 0.029, 0.058, and 0.12 ions/nm2, which produced relatively low damage levels. The disorder profiles as a function of ion fluence on both the Si and C sublattices have been determined simultaneously in situ using Rutherford backscattering and nuclear reaction analysis with 0.94 MeV D{sup +} ions in channeling geometry along the <0001>, <1{bar 1}02>, and <10{bar 1}1> axes. Along the <0001> axis at these low doses, similar levels of Si and C disorder are observed, and the damage accumulation is linear with dose. However, along <1{bar 1}02> and <10{bar 1}1>, the disorder accumulation is larger and increases sublinearly with dose. Furthermore, a higher level of C disorder than Si disorder is observed along the <1{bar 1}02> and <10{bar 1}1> axes, which is consistent with a smaller threshold displacement energy on the C sublattice in SiC. The mean lattice displacement, perpendicular to each corresponding axis, ranges from 0.014 to 0.037 nm for this range of ion fluences. A steady accumulation of small displacements due to lattice stress is observed along the <10{bar 1}1> axis, and a detectable reduction of the lattice stress perpendicular to the <0001> axis occurs at 0.12 Au{sup 2+}/nm{sup 2}. There is only a moderate recovery of disorder, produced at and below 0.058 Au{sup 2+}/nm{sup 2}, during thermal annealing at 570 K; more significant recovery is observed for 0.12 Au{sup 2+}/nm{sup 2} along both the <0001> and <1{bar 1}02> axes.},
doi = {10.1103/PhysRevB.64.125206},
journal = {Physical Review B},
issn = {0163-1829},
number = 12,
volume = 64,
place = {United States},
year = {2001},
month = {9}
}