Multiaxial Channeling Study of Disorder Accumulation and Recovery in Gold-Irradiated 6H-SiC
Single crystal 6H-SiC has been irradiated 60 degrees off normal with 2 MeV Au ions at 300 K to fluences of 0.029, 0.058 and 0.12 ions/nm, which produced relatively low damage levels. The disorder profiles as a function of ion fluence on both the Si and C sublattices have been determined simultaneously in situ using Rutherford backscattering and nuclear reaction analysis with 0.94 MeV D+ ions in channeling geometry along the <0001>, <102> and <101> axes. Along the <0001> axis at these low doses, similar levels of Si and C disorder are observed, and the damage accumulation is linear with dose. However, along <102> and <101>, the disorder accumulation is larger and increases sublinearly with dose. Furthermore, a higher level of C disorder than Si disorder is observed along the <102> and <101> axes, which is consistent with a smaller threshold displacement energy on the C sublattice in SiC. The mean lattice displacement, perpendicular to each corresponding axis, ranges from 0.014 to 0.037 nm for this range of ion fluences. A steady accumulation of small displacements due to lattice stress is observed along the <101> axis, and a detectable reduction of the lattice stress perpendicular to the <0001> axis occurs at 0.12 Au/nm. There is only a moderate recovery of disorder, produced at and below 0.058 Au/nm, during thermal annealing at 570 K; more significant recovery is observed for 0.12 Au/nm along both the <0001> and <102> axes.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC06-76RL01830
- OSTI ID:
- 15007480
- Report Number(s):
- PNNL-SA-34739; KC0201020
- Journal Information:
- Physical Review. B, Condensed Matter, 64(12):125206, 1-11, Journal Name: Physical Review. B, Condensed Matter, 64(12):125206, 1-11
- Country of Publication:
- United States
- Language:
- English
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