Multi-Axial Channeling Study of Disorder in Gold Implanted 6H-SiC
Single-crystal wafers of 6H-SiC were irradiated at 300 K with 2 MeV Au ions over fluences ranging from 0.029 to 0.8 ions/nm. The accumulated disorder on both the Si and C sublattices in the irradiated specimens has been studied in situ using 0.94 MeV D channeling along <0001>, <102> and <101> axes. At low doses, results show that some of the Si and C defects are well aligned with the <0001> axis with more C defects shielded by the <0001> atomic rows; a higher level of C disorder is observed, which is consistent with a smaller threshold displacement energy on the C sublattice. There is only a moderate recovery of disorder, produced at and below 0.058 Au/nm, during the thermal annealing at 570 K; similar behavior is observed in the higher-dose samples annealed between 720 and 870 K. The results suggest the presence of defect clusters and amorphous domains formed during the Au irradiation. Reordering process at 570 K in the weakly damaged 6H-SiC (0.12 Au/nm, 300 K) appears to occur closely along the <101> direction.
- Research Organization:
- Pacific Northwest National Lab., Richland, WA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC06-76RL01830
- OSTI ID:
- 15001904
- Report Number(s):
- PNNL-SA-33972; KC0201020; TRN: US200419%%133
- Resource Relation:
- Conference: Silicon Carbide - Materials, Processing, and Devices. Symposium, Boston, MA (US), 11/27/2000--11/29/2000; Other Information: PBD: 25 Apr 2001
- Country of Publication:
- United States
- Language:
- English
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