Anisotropy of disorder accumulation and recovery in 6H-SiC irradiated with Au2+ ions at 140 K
Single crystal <0001>-oriented 6H-SiC was irradiated with Au2+ ions to fluences of 0.032, 0.058 and 0.105 ions/nm2 at 140 K and was subsequently annealed at various temperatures up to 500 K. The relative disorder on both the Si and C sublattices has been determined simultaneously using in-situ D+ ion channeling along the <0001> and <2-201> axes. A higher level of disorder on both the Si and C sublattices is observed along the <2-201>. There is a preferential C disordering and more C interstitials are aligned with <0001>. Room-temperature recovery along <2-201> occurs, which is associated with the <0001>-aligned interstitials that annihilate due to close-pair recombination. Disorder recovery between 400 and 500 K is primarily attributed to annihilation of interstitials that are misaligned with <0001>. Effects of stacking order in SiC on disorder accumulation are insignificant; however, noticeable differences of low-temperature recovery in Au2+-irradiated 6H-SiC and 4H-SiC are observed.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 958003
- Report Number(s):
- PNNL-SA-60210; JNUMAM; 19841; KC0201020; TRN: US1005616
- Journal Information:
- Journal of Nuclear Materials, 389(2):332-335, Vol. 389, Issue 2; ISSN 0022-3115
- Country of Publication:
- United States
- Language:
- English
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