Temperature Dependence of Disorder Accumulation and Amorphization in Au-Ion Irradiated 6H-SiC
Disorder accumulation and amorphization in 6H-SiC single crystals irradiated with 2.0 MeV Au₂⁺ ions at temperatures ranging from 150 to 550 K have been investigated systematically based on 0.94 MeV D⁺ channeling analyses along the <0001> axis. Physical models have been applied to fit the experimental data and to interpret the temperature dependence of the disordering processes. Results show that defect-stimulated amorphization in Au₂⁺-irradiated 6H-SiC dominates the disordering processes at temperatures below 500 K, while formation of clusters becomes predominant above 500 K. Two distinctive dynamic recovery stages are observed over the temperature range from 150 to 550 K, resulting from the coupled processes of close-pair recombination and interstitial migration and annihilation on both sublattices. These two stages overlap very well with the previously observed thermal recovery stages. Based on the model fits, the critical temperature for amorphization in 6H-SiC under the Au₂⁺ ion irradiation conditions corresponds to 501 +- 10 K.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 15010683
- Report Number(s):
- PNNL-SA-41270; 3448; KC0201020; TRN: US0500312
- Journal Information:
- Physical Review. B, Condensed Matter, 70(16):165208, 1-8, Vol. 70, Issue 16
- Country of Publication:
- United States
- Language:
- English
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Accumulation and Recovery of Disorder on Silicon and Carbon Sublattices in Ion-Irradiated 6H-SiC
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Related Subjects
ANNIHILATION
CHANNELING
CRITICAL TEMPERATURE
INTERSTITIALS
IRRADIATION
MONOCRYSTALS
RECOMBINATION
TEMPERATURE DEPENDENCE
THERMAL RECOVERY
Ion irradiation
Disorder accumulation
Dynamic recovery
Silicon carbide
implantation temperature
damage accumulation
single-crystals
recovery
sublattices
ceramics
carbon
flux
Environmental Molecular Sciences Laboratory