Temperature dependence of disorder accumulation and amorphization in Au-ion-irradiated 6H-SiC
- Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States)
Disorder accumulation and amorphization in 6H-SiC single crystals irradiated with 2.0 MeV Au{sup 2+} ions at temperatures ranging from 150 to 550 K have been investigated systematically based on 0.94 MeV D{sup +} channeling analyses along the <0001> axis. Physical models have been applied to fit the experimental data and to interpret the temperature dependence of the disordering processes. Results show that defect-stimulated amorphization in Au{sup 2+}-irradiated 6H-SiC dominates the disordering processes at temperatures below 500 K, while formation of clusters becomes predominant above 500 K. Two distinctive dynamic recovery stages are observed over the temperature range from 150 to 550 K, resulting from the coupled processes of close-pair recombination and interstitial migration and annihilation on both sublattices. These two stages overlap very well with the previously observed thermal recovery stages. Based on the model fits, the critical temperature for amorphization in 6H-SiC under the Au{sup 2+} ion irradiation conditions corresponds to 501{+-}10 K.
- OSTI ID:
- 20664929
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 70, Issue 16; Other Information: DOI: 10.1103/PhysRevB.70.165208; (c) 2004 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ANNIHILATION
CRITICAL TEMPERATURE
DEFECTS
DEUTERIUM IONS
EXPERIMENTAL DATA
GOLD
GOLD IONS
INTERSTITIALS
ION BEAMS
IRRADIATION
MEV RANGE 01-10
MONOCRYSTALS
SEMICONDUCTOR MATERIALS
SILICON COMPOUNDS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THERMAL RECOVERY