Effect of lithium ion irradiation on the transport and optical properties of Bridgman grown n-type InSb single crystals

Journal Article · Wed Aug 15 04:00:00 EDT 2001 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1389331· OSTI ID:40230506

Dixit, V K; Rodrigues, B V; Bhat, H L; Kumar, Ravi; Venkataraghavan, R; Chandrasekaran, K S; Arora, B M

Single crystal (100) wafers of n-InSb were implanted with 50 MeV Li{sup 3+} ions at various fluences ranging from 10{sup 10} to 10{sup 14}ions/cm{sup 2} at room temperature. Investigations of the optical, electrical, and structural properties of the as-grown, irradiated, annealed wafers were carried out by infrared and Raman spectroscopies, Hall measurements, and high resolution x-ray diffraction (HRXRD). In the case of samples irradiated with an ion fluence of 1.6 x 10{sup 14}ions/cm{sup 2}, electrical measurements at 80 K reveal that there is a decrease in carrier concentration from 8.5 x 10{sup 15} (for unirradiated) to 1.1 x 10{sup 15}/cm{sup 3} and an increase in mobility from 5.4 x 10{sup 4} to 1.67 x 10{sup 5}cm{sup 2}/Vs. The change in carrier concentration is attributed to the creation of electron trap centers induced by ion beam irradiation and the increase in mobility to the formation of electrical inactive complexes. Nevertheless, even with the irradiation at 1.6 x 10{sup 14}ions/cm{sup 2} fluence the crystalline quality remains largely unaffected, as is seen from HRXRD and Raman studies. {copyright} 2001 American Institute of Physics.

• Sponsoring Organization: (US)
• OSTI ID: 40230506
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 90; ISSN 0021-8979
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
ELECTRONS
ION BEAMS
IRRADIATION
LITHIUM IONS
MONOCRYSTALS
OPTICAL PROPERTIES
PHYSICS
RESOLUTION
TRANSPORT
X-RAY DIFFRACTION