Tin doping of InSb grown by MOCVD using tetraethyltin

Conference · Sun Dec 31 23:00:00 EST 1989

OSTI ID:6963561

Biefeld, R M

Tetraethyltin was investigated as an n-type dopant for InSb. Carrier concentrations between 6 {times} 10{sup 15} and 4 {times} 10{sup 18} cm{sup {minus}3} with 77 K mobilities ranging from 75,000 to 10,000 cm{sup 2}/Vs were achieved for Sn doped InSb. SIMS measurements indicate a diffusion coefficient for Sn in InSb at 470 C that is approximately 1{times}10{sup {minus}15} cm{sup 2}/s. Both Hall and SIMS measurements on Sn doped samples indicate that Sn in incorporated as an n-type dopant with no memory effect and no self compensation, making Sn a much better doping source than Te or Se. 9 refs., 4 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6963561
• Report Number(s): SAND-90-0256C; CONF-900562--3; ON: DE90009727
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
ALLOYS
ANTIMONY ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DOPING
DEPOSITION
DOPED MATERIALS
INDIUM ALLOYS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERMETALLIC COMPOUNDS
MATERIALS
N-TYPE CONDUCTORS
PHOTODIODES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SURFACE COATING
TIN COMPOUNDS