Improving the performance of InAs sub 1-x Sb sub x /InSb infrared detectors grown by metal organic chemical vapor deposition
Diethylselenium and tetraethyltin were investigated as n-type dopants for InSb. Carrier concentrations between 6 {times} 10{sup 15} and 4 {times} 10{sup 18} cm{sup -3} with 77 K mobilities ranging from 75, 000 to 10,000 cm{sup 2}/Vs were achieved for Sn doped InSb. Triethylantimony and trimethylindium were used to grow InSb over the temperature range of 410 {minus} 470 C with a decrease in the p-type background occurring at 410 C. Diodes were prepared using tetraethyltin, trimethylindium and trimethylantimony at 470 C. The resulting current-voltage characteristics are improved over those of diodes grown previously using dimethyltellurium. SIMS measurements indicate a diffusion coefficient for Sn in InSb at 470 C that is approximately 1 {times} 10{sup -15} cm{sup 2}/s. 8 refs., 4 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- Sponsoring Organization:
- DOE/DP
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6925153
- Report Number(s):
- SAND-90-0088C; CONF-9006174--1; ON: DE90009743
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601 -- Other Materials-- Preparation & Manufacture
360603* -- Materials-- Properties
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ANTIMONY COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DOPED MATERIALS
FABRICATION
INDIUM COMPOUNDS
MATERIALS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PERFORMANCE
PHOTODIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SUPERLATTICES
SURFACE COATING
TIN COMPOUNDS