Low temperature oxidation processing with high purity ozone

Book · Sun Dec 01 04:00:00 EST 1996

OSTI ID:400671

Kurokawa, A; Ichimura, S ^[1]; Kang, H J ^[2]; Moon, D W ^[3]

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1. Electrotechnical Lab., Tukuba (Japan)
2. Chungbuk National Univ., Cheongju (Korea, Republic of). Dept. of Physics
3. Korea Research Inst. of Standards and Science, Taejon (Korea, Republic of)

To lower the temperature of oxide-passivation processing the high-purity ozone (more than 98 mole %) was used instead of usual thermal oxidation. Initial oxide formation on a Si(111) surface with high-purity ozone is investigated by X-ray photoelectron spectroscopy (XPS). From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. The oxidation with ozone also proceeds on the hydrogen passivated surface which oxygen molecules do not oxidize.

• OSTI ID: 400671
• Report Number(s): CONF-960401--; ISBN 1-55899-332-0
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EXPERIMENTAL DATA
FABRICATION
GAS FLOW
HYDROGEN
ION SCATTERING ANALYSIS
OXIDATION
OXYGEN
OZONE
PASSIVATION
PHOSPHORUS ADDITIONS
PHOTOELECTRON SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
TEMPERATURE DEPENDENCE
ULTRAVIOLET RADIATION