Gallium nitride films made by liquid target pulsed laser deposition
- Hong Kong Univ. of Science and Technology, Kowloon (Hong Kong)
In this paper, formation of single c-axis oriented wurtzite gallium nitride films on various substrates as fused silica, Si(111) and sapphire(0001) with ZnO buffer layers by liquid target pulsed laser deposition is reported. The deposition conditions were optimized with a temperature of 600 C and an ammonia pressure of 750mTorr. X-ray diffraction(XRD), Scanning Electron Microscopy (SEM), Tunneling Electron Microscopy(TEM), room temperature Hall effect measurement, UV/VIS Spectrometry, Rutherford Backscattering Spectrometry(RBS) and X-ray Photoelectron Spectroscopy(XPS) were used to characterize the as-grown films. It is shown that high quality single c-axis orientation stoichiometric gallium nitride films could be formed with a thin (less than 1,000 {angstrom}) zinc oxide buffer layer. The FWHM of x-ray rocking curve of the (0002) peak of GaN grown on ZnO/sapphire(0001) was as narrow as 0.52. It was also found that the surface morphology was greatly improved with the zinc oxide buffer.
- OSTI ID:
- 536338
- Report Number(s):
- CONF-9611124-; ISBN 0-8194-2289-4; TRN: IM9745%%177
- Resource Relation:
- Conference: SPIE photonics China `96, Beijing (China), 3-7 Nov 1996; Other Information: PBD: 1996; Related Information: Is Part Of Laser processing of materials and industrial applications; Deng, S.S.; Wang, S.C. [eds.]; PB: 437 p.; Proceedings/SPIE, Volume 2888
- Country of Publication:
- United States
- Language:
- English
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