Growth of (0001) ZnO thin films on sapphire

Book · Wed Dec 31 04:00:00 EST 1997

OSTI ID:581040

Drehman, A J; Yip, P W ^[1]

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1. Rome Lab., Hanscom AFB, MA (United States)

Using reactive rf sputtering, the authors have grown (0001) oriented ZnO films in situ on heated c-axis sapphire substrates, that are promising, particularly in terms of surface roughness, as buffer layers for the subsequent epitaxial growth of III-V nitride films. The authors compare the effects of on-axis and off-axis sputter geometries on the film epitaxy and smoothness. They also examined the effect of substrate temperature on the growth and smoothness and quality of the film. X-ray diffraction was used to verify the hexagonal ZnO phase, its c-axis orientation and, qualitatively, the degree of its epitaxy. Atomic Force Microscopy (AFM) was used to determine the ZnO growth morphology and roughness. The best films, obtained by off-axis sputter deposition, have a surface roughness of less than 1 nm.

• OSTI ID: 581040
• Report Number(s): CONF-961202--; ISBN 1-55899-353-3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EPITAXY
EXPERIMENTAL DATA
MICROSTRUCTURE
SUBSTRATES
SURFACE PROPERTIES
ZINC OXIDES