Hydrogen passivation and ozone oxidation of silicon surface
Book
·
OSTI ID:308088
- Electrotechnical Lab., Tsukuba (Japan)
The oxidation of H/Si(100) and H/Si(111) with high concentration ozone gas was investigated with X-ray photoelectron spectroscopy (XPS). The ozone oxidation of partially hydride-covered surface was observed. The hydrogen termination reduced the rate of oxygen insertion into silicon backbond. The reduction of oxygen insertion rate by the H-termination for H/Si(100) was larger than that for H/Si(111). The dissociation rate of ozone molecule on H/Si was estimated to be {approx_equal}0.2 with a directional mass analyzer.
- OSTI ID:
- 308088
- Report Number(s):
- CONF-980405--
- Country of Publication:
- United States
- Language:
- English
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