Fabrication of subwavelength, binary, antireflection surface-relief structures in the near infrared

Journal Article · Fri Nov 01 04:00:00 EST 1996 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.588598· OSTI ID:399799

Wendt, J R; Vawter, G A; Smith, R E; Warren, M E ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)

Subwavelength, binary surface-relief structures are artificial materials with an effective index of refraction that can be tailored by varying the duty cycle of the binary pattern. These structures have the significant advantage of requiring only a single lithography and etch step for fabrication. We demonstrate a specifically designed antireflection structure in a material system (GaAs) and at a wavelength (975 nm) directly integrable with GaAs-based vertical cavity surface-emitting lasers and which exhibits strong polarization-dependent properties. Fabrication is performed using electron beam lithography and reactive-ion-beam etching. The observed reflectivity is 2{percent} for TE polarization and 23{percent} for TM polarization, a difference in reflectivity of over a factor of 10 for the two polarizations. {copyright} {ital 1996 American Vacuum Society}

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 399799
• Report Number(s): CONF-960582--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 6 Vol. 14; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BIREFRINGENCE
ETCHING
GALLIUM ARSENIDES
INTEGRATED OPTICS
LINEAR POLARIZATION
LITHOGRAPHY
NEAR INFRARED RADIATION
REFLECTIVITY