Electronic sputtering and desorption effects in TOF-SIMS studies using slow highly charged ions like Au{sup 69+}

Conference · Sun Sep 01 04:00:00 EDT 1996

OSTI ID:397157

Schenkel, T ^[1]; Briere, M A ^[2]; Schmidt-Boecking, H; Bethge, K ^[3]; Schneider, D ^[4]

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1. Lawrence Livermore National Lab., CA (United States); Frankfurt Univ. (Germany). Inst. fuer Kernphysik
2. Rhode Island Univ., Kingston, RI (United States). Dept. of Physics
3. Frankfurt Univ. (Germany). Inst. fuer Kernphysik
4. Lawrence Livermore National Lab., CA (United States)

Secondary ion yields from highly oriented pyrolytic graphite (HOPG) and SiO{sub 2} (native oxide on float zone silicon) targets at impact of slow (v {approx} 0.3 v{sub bohr}) highly charged ions have been measured by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS). A direct comparison of collisional and electronic effects in secondary ion production using a beam of charge state equilibrated 300 keV Xe{sup 1+} shows a secondary ion yield increase with incident ion charge of {>=}100.

• Research Organization: Lawrence Livermore National Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 397157
• Report Number(s): UCRL-JC--125358; CONF-9609280--1; ON: DE97050166
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
43 PARTICLE ACCELERATORS
66 PHYSICS
DESORPTION
GOLD 197 BEAMS
GRAPHITE
MATERIALS TESTING
SECONDARY BEAMS
SILICON OXIDES
SPUTTERING
TARGETS
TIME-OF-FLIGHT MASS SPECTROMETERS
TIME-OF-FLIGHT METHOD