Electronic desorption of alkyl monolayers from silicon by very highly charged ions

Journal Article · Sun Nov 01 04:00:00 EST 1998 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.590372· OSTI ID:300103

Schenkel, T; Schneider, M; Hattass, M; Newman, M W; Barnes, A V; Hamza, A V; Schneider, D H ^[1]; Cicero, R L; Chidsey, C E ^[2]

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1. Lawrence Livermore National Laboratory, Livermore, California, 94550 (United States)
2. Department of Chemistry, Stanford University, Stanford, California, 94305 (United States)

Self-assembled alkyl monolayers on Si (111) were exposed to low doses of slow (v{approx}6.6{times}10{sup 5} m/s{approx}0.3v{sub Bohr}), highly charged ions, like Xe{sup 41+} and Th{sup 73+}. Atomic force microscope images show craters from single ion impacts with diameters of 50{endash}63 nm. Emission of secondary ions by highly charged projectiles was monitored by time-of-flight secondary ion mass spectrometry (TOF-SIMS). TOF-SIMS data give insights into the dependence of electronic desorption effects on the projectile charge state. We discuss the potential of highly charged projectiles as tools for materials modification on a nanometer scale. {copyright} {ital 1998 American Vacuum Society.}

• OSTI ID: 300103
• Report Number(s): CONF-9805132--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 6 Vol. 16; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
40 CHEMISTRY
ALKYL RADICALS
DESORPTION
MASS SPECTRA
MULTICHARGED IONS
ORGANIC COMPOUNDS
RADIATION EFFECTS
SECONDARY EMISSION
SILICON
THORIUM IONS
XENON IONS