Electronic sputtering of solids by slow, highly charged ions: fundamentals and applications

Conference · Tue Jul 20 04:00:00 EDT 1999

OSTI ID:10998

Banks, J C ^[1]; Barnes, A V; Doyle, B L; Hamza, A V; Machioane, G A; McDonald, J W; Newman, M W; Niedermayr, T R; Schenkel, T; Wu, K J

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1. LLNL

Electronic sputtering in the interaction of slow (v<v{sub Bohr}), highly charged ions (SHCI) with solid surfaces have been subject of controversial discussions for almost 20 years. We review results from recent studies of total sputtering yields and discuss distinct microscopic mechanisms (such as defect mediated desorption, Coulomb explosions and effects of intense electronic excitation) in the response of insulators and semiconductors to the impact of SHCI. We then describe an application of ions like Xe{sup 44+} and Au{sup 69+} as projectiles in time-of-flight secondary ion mass spectrometry for surface characterization of semiconductors.

• Research Organization: Lawrence Livermore National Lab., CA (US)
• Sponsoring Organization: USDOE Office of Energy Research (ER) (US)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 10998
• Report Number(s): UCRL-JC-133729; YN0100000; YN0100000
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEFECTS
DESORPTION
EXCITATION
GOLD IONS
ION BEAMS
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SPUTTERING
SURFACE PROPERTIES
XENON IONS