Coulomb explosion potential sputtering induced by slow highly charged ion impact
- Institute for Laser Science and Department of Applied Physics and Chemistry, University of Electro-Communications, Chofu, Tokyo 182-8585 (Japan)
We have observed secondary ion emission from a hydrogen-terminated Si(111) 1x1 surface and a native SiO{sub 2} thin film on the Si substrate (SiO{sub 2}/Si) irradiated with slow (v{sub ion}<v{sub Bohr}) iodine highly charged ions (HCIs) in a wide range of charge state q from q=15 up to 50. The yields of secondary ions evaluated from time-of-flight mass spectra showed rapid increases with q of the projectile. The relation of the yields to the potential energy of HCIs is discussed in terms of the Coulomb explosion model. It was found that the simultaneous emission of multiple Si{sup +} ions occurs in an event of a single high-q HCI impact onto the SiO{sub 2}/Si.
- OSTI ID:
- 20706449
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 87; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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