Formation of cavities in Si and their chemisorption of metals
Conference
·
OSTI ID:39703
Nanometer-size cavities formed in Si by He{sup +} implantation and annealing are examined with cross-section TEM. During annealing at 700 C or above, He degasses from the specimens, leaving uhv cavities with reactive Si bonds on their walls. Cavity microstructures have been characterized in detail for an implanted fluence of 1 {times} 10{sup 17} He/cm{sup 2}: cavity volume remains approximately constant (0.75 lattice sites/He) for anneals from 700 to {approximately}1000 C, while surface area (3 to 7 times the wafer area) decreases with temperature as the cavities coarsen. The cavities are found to getter up to {approximately}1 monolayer of Cu or Au from solution in Si without second-phase formation, thus identifying the trapping mechanism as chemisorption on the cavity walls.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 39703
- Report Number(s):
- SAND--94-3247C; CONF-9503125--1; ON: DE95009586
- Country of Publication:
- United States
- Language:
- English
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