Segregation gettering by implantation-formed cavities and B-Si precipitates in silicon
Conference
·
OSTI ID:650275
- Sandia National Lab., Albuquerque, NM (United States); and others
The authors show that Fe, Co, Cu, and Au in Si undergo strong segregation gettering to cavities and B-Si precipitates formed by He or B ion implantation and annealing. The respective mechanisms are argued to be chemisorption on the cavity walls and occupation of solution sites within the disordered, B-rich, B-Si phase. The strengths of the reactions are evaluated, enabling prediction of gettering performance.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 650275
- Report Number(s):
- SAND--97-1936C; CONF-980528--; ON: DE98004109; BR: KC0201030
- Country of Publication:
- United States
- Language:
- English
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