Strong segregation gettering of transition metals by implantation-formed cavities and boron-silicide precipitates in silicon
Conference
·
OSTI ID:243504
- and others
We have mechanistically and quantitatively characterized the binding of transition-metal impurities in Si to cavities formed by He implantation and to B-Si precipitates resulting from B implantation. Both sinks are inferred to act by the segregation of metal atoms to pre-existing low-energy sites, namely surface chemisorption sites in the case of cavities and bulk solution sites in the case of the B-Si phase. These gettering processes exhibit large binding energies, and they are predicted to remain active for arbitrarily small initial impurity concentrations as a result of the segregation mechanisms. Both appear promising for gettering in Si devices.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 243504
- Report Number(s):
- SAND--96-0612C; CONF-9606136--2; ON: DE96011837
- Country of Publication:
- United States
- Language:
- English
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