Cavity formation and impurity gettering in He-implanted Si
Cavity microstructures formed in Si after ion implantation of He and annealing at 700 C or above are examined with cross-section transmission electron microscopy. A threshold concentration of 1.6 at.% He is identified to form cavities that survive such anneals. The cavities coarsen with a constant volume of 15 nm{sup 3}/nm{sup 2} (per wafer surface area), corresponding to {approximately}0.75 lattice sites per implanted He atom. The internal area of the cavities is 3--7 times that of the wafer surface area for fluences of 1 {times} 10{sup 17} He/cm{sup 2}. Transition metal atoms (Cu, Ni, Co, Fe, Au) are shown to be strongly trapped (1.5--2.2 eV) on the cavity walls by chemisorption. Whereas Cu, Au and Ni are bound more strongly to the cavity sites than to their respective precipitated phases, Co and Fe are more strongly bound to their silicides; nonetheless, appreciable trapping of Co and Fe does occur in equilibrium with the silicides. Cavity trapping appears to be an effective gettering mechanism at low impurity levels, as needed to meet future microelectronics device requirements.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 28380
- Report Number(s):
- SAND--94-2049C; CONF-950201--3; ON: DE95007744
- Country of Publication:
- United States
- Language:
- English
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