A modeling study of GaN growth by MOVPE

Conference · Thu Oct 31 23:00:00 EST 1996

OSTI ID:394961

Safvi, S A; Kuech, T F ^[1]; Redwing, J M; Tischler, M A ^[2]

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1. Univ. of Wisconsin, Madison, WI (United States). Dept. of Chemical Engineering
2. Advanced Technology Materials, Danbury, CT (United States)

A model for the growth of gallium nitride in a vertical metalorganic vapor phase epitaxy reactor is presented. For a mixture of non-dilute gases, the flow temperature and concentration profiles are predicted. The results show that the growth of GaN epilayers is through an intermediate adduct of TMG and ammonia. Growth rates are predicted based on simple reaction mechanisms and compared with those obtained experimentally. Loss of adduct species due to polymerization leads to lowering in growth rate. An attempt to quantify loss of reacting species is made based on experimentally observed growth rates.

• OSTI ID: 394961
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
AMMONIA
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
COMPUTER CALCULATIONS
DIFFERENTIAL EQUATIONS
ELECTRONIC EQUIPMENT
FINITE ELEMENT METHOD
GALLIUM NITRIDES
GAS FLOW
HEAT TRANSFER
HYDROGEN
MASS TRANSFER
MATHEMATICAL MODELS
ORGANOMETALLIC COMPOUNDS
SEMICONDUCTOR MATERIALS