Alternative routes to the MOVPE growth of GaN and AlN
- Univ. of Sheffield (United Kingdom). Dept. of Electronic and Electrical Engineering
- Epichem Ltd., Wirral (United Kingdom)
Alternative precursors to group-III nitrides have been studied based on two schemes: (1) the reaction Me{sub 3}M (M = Al, Ga) with t-BuNH{sub 2} and (2) the decomposition of NH{sub 3} based adducts. Polycrystalline growth of AlN has been demonstrated by both routes. Decomposition of the adduct Me{sub 3}Al:NH{sub 3} has been used to prepare epitaxial AlN on (0001) sapphire with an X-ray FWHM (full width at half maximum) of 16 arcmin at a growth temperature of 1,050 C. Similar growth using analogous gallium precursors always resulted in gallium droplets. The authors have attributed this difference in chemical reactivities to the lower electronegativity of gallium compounds, thus leading to dissociation rather than sequential methane loss to form the nitride.
- OSTI ID:
- 394973
- Report Number(s):
- CONF-951155--; ISBN 1-55899-298-7
- Country of Publication:
- United States
- Language:
- English
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