A new single source precursor approach to gallium and aluminum nitride

Book · Fri Nov 01 04:00:00 EST 1996

OSTI ID:394935

Neumayer, D A; Carmalt, C J; Arendt, M F; White, J M; Cowley, A H; Jones, R A; Ekerdt, J G ^[1]

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1. Univ. of Texas, Austin, TX (United States). Science and Technology Center for Synthesis, Growth and Analysis of Electronic Materials

Single source precursor which contain preformed gallium-nitrogen and aluminum-nitrogen bonds are being considered for the growth of gallium and aluminum nitride because of their potential for overcoming problems associated with conventional precursors. Presented is the evaluation of dimethylgallium azide, Me{sub 2}GaN{sub 3} (1), bisdimethylamidogallium azide, (Me{sub 2}N){sub 2}GaN{sub 3} (2), and bisdimethylamidoaluminum azide, (Me{sub 2}N){sub 2}AlN{sub 3} (3) as potential precursors for AlN and GaN film growth. The compounds were evaluated for stability, ease of transport, temperature of decomposition and quality of film deposited. Amorphous thin films of GaN with a band gap of 3.4 eV were deposited with 2 at 250 C. Increasing the substrate temperature to 580 C resulted in the deposition of epitaxial GaN films. Polycrystalline AlN films were grown with 3 at 600 C.

• OSTI ID: 394935
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
ARGON
BINDING ENERGY
CHEMICAL VAPOR DEPOSITION
ETCHING
EXPERIMENTAL DATA
GALLIUM NITRIDES
NITROGEN
ORGANOMETALLIC COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
SILICON
SUBSTRATES
SURFACE CLEANING
TEMPERATURE DEPENDENCE
THIN FILMS